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| PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 FEB 94 FEATURES * 80 Volt VCEO * Gain of 50 at IC=100mA MPSA56 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -80 -80 -4 -500 750 -55 to +175 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES VCE(sat) VBE(on) 50 50 100 MHz MIN. -80 -80 -4 -0.1 -0.1 -0.25 -1.2 TYP. MAX. UNIT V V V A A CONDITIONS. IC=-100A, IE=0 IC=-1mA, IB=0* IE=-100A, IC=0 VCB=-80V, IE=0 VCE=-60V IC=-100mA, IB=-10mA* IC=-100mA, VCE=-1V* IC=-10mA, VCE=1V* IC=-100mA, VCE=1V* IC=-10mA, VCE=-2V f=100MHz V V Static Forward Current hFE Transfer Ratio Transition Frequency fT *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-81 |
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